Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors

出版年份 2019 全文链接

标题

作者

关键词

AlN, x, -based RRAM, RTA process, Nonlinear behaviors, Trapping centroid, Direct tunneling, Trap-assisted tunneling

出版物

MICROELECTRONIC ENGINEERING

Volume 216, Issue -, Pages 111033

出版商

Elsevier BV

发表日期

2019-06-06

DOI

10.1016/j.mee.2019.111033

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