Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

(2019) Scott W. Schmucker et al.   Physical Review Applied

High resolution thickness measurements of ultrathin Si:P monolayers using weak localization

(2018) Joseph A. Hagmann et al.   APPLIED PHYSICS LETTERS

Two-electron spin correlations in precision placed donors in silicon

(2018) M. A. Broome et al.   Nature Communications

STM patterned nanowire measurements using photolithographically defined implants in Si(100)

(2018) A. N. Ramanayaka et al.   Scientific Reports

Adequacy of Si:P chains as Fermi–Hubbard simulators

(2018) Amintor Dusko et al.   npj Quantum Information

Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers

(2018) Xiqiao Wang et al.   Nanoscale

Atom-by-Atom Construction of a Cyclic Artificial Molecule in Silicon

(2018) Jonathan Wyrick et al.   NANO LETTERS

Single-electron tunneling through an individual arsenic dopant in silicon

(2017) V. V. Shorokhov et al.   Nanoscale

High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon

(2017) M. A. Broome et al.   PHYSICAL REVIEW LETTERS

Quantum simulations with ultracold atoms in optical lattices

(2017) Christian Gross et al.   SCIENCE

Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C

(2016) Xiao Deng et al.   APPLIED SURFACE SCIENCE

Quantum simulation of the Hubbard model with dopant atoms in silicon

(2016) J. Salfi et al.   Nature Communications

Band transport across a chain of dopant sites in silicon over micron distances and high temperatures

(2016) Enrico Prati et al.   Scientific Reports

Highly tunable exchange in donor qubits in silicon

(2016) Yu Wang et al.   npj Quantum Information

Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers

(2015) Joris G. Keizer et al.   ACS Nano

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

(2015) Muhammad Usman et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single DonorD−Charge State

(2015) T. F. Watson et al.   PHYSICAL REVIEW LETTERS

A surface code quantum computer in silicon

(2015) C. D. Hill et al.   Science Advances

Spin blockade and exchange in Coulomb-confined silicon double quantum dots

(2014) Bent Weber et al.   Nature Nanotechnology

A Tight-Binding Study of Single-Atom Transistors

(2014) Hoon Ryu et al.   Small

Scaling the Ion Trap Quantum Processor

(2013) C. Monroe et al.   SCIENCE

Spin readout and addressability of phosphorus-donor clusters in silicon

(2013) H. Büch et al.   Nature Communications

Engineering Independent Electrostatic Control of Atomic-Scale (∼4 nm) Silicon Double Quantum Dots

(2012) Bent Weber et al.   NANO LETTERS

Designer Dirac fermions and topological phases in molecular graphene

(2012) Kenjiro K. Gomes et al.   NATURE

A single-atom transistor

(2012) Martin Fuechsle et al.   Nature Nanotechnology

Switching quantum transport in a three donors silicon fin-field effect transistor

(2011) Guillaume Leti et al.   APPLIED PHYSICS LETTERS

Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

(2011) Damien J Carter et al.   NANOTECHNOLOGY

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

(2011) Craig M Polley et al.   Nanoscale Research Letters

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

(2009) Kuan Yen Tan et al.   NANO LETTERS

Single-donor ionization energies in a nanoscale CMOS channel

(2009) M. Pierre et al.   Nature Nanotechnology

Investigating the surface quality and confinement of Si:P at different growth temperatures

(2009) Sarah R. McKibbin et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Electronic structure models of phosphorusδ-doped silicon

(2009) Damien J. Carter et al.   PHYSICAL REVIEW B

Atomic-Scale Templates Patterned by Ultrahigh Vacuum Scanning Tunneling Microscopy on Silicon

(2008) Michael A. Walsh et al.   Annual Review of Physical Chemistry

Atomic-scale silicon device fabrication

(2008) M.Y. Simmons et al.   International Journal of Nanotechnology

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics