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Title
Highly tunable exchange in donor qubits in silicon
Authors
Keywords
-
Journal
npj Quantum Information
Volume 2, Issue 1, Pages -
Publisher
Springer Nature
Online
2016-04-12
DOI
10.1038/npjqi.2016.8
References
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Related references
Note: Only part of the references are listed.- Electrically controlling single-spin qubits in a continuous microwave field
- (2015) A. Laucht et al. Science Advances
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- Spin blockade and exchange in Coulomb-confined silicon double quantum dots
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- (2014) Juha T. Muhonen et al. Nature Nanotechnology
- Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy
- (2014) G. Pica et al. PHYSICAL REVIEW B
- Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon
- (2014) Yu-Ling Hsueh et al. PHYSICAL REVIEW LETTERS
- High-fidelity readout and control of a nuclear spin qubit in silicon
- (2013) Jarryd J. Pla et al. NATURE
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- (2013) H. Büch et al. Nature Communications
- A single-atom electron spin qubit in silicon
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- Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric
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- (2012) M. D. Shulman et al. SCIENCE
- Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
- (2011) R. Rahman et al. PHYSICAL REVIEW B
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- Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors
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