In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

Published 2019 View Full Article

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Title
In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals
Authors
Keywords
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Journal
ACS Applied Materials & Interfaces
Volume 11, Issue 40, Pages 37263-37269
Publisher
American Chemical Society (ACS)
Online
2019-09-13
DOI
10.1021/acsami.9b11489

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