In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

标题
In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 11, Issue 40, Pages 37263-37269
出版商
American Chemical Society (ACS)
发表日期
2019-09-13
DOI
10.1021/acsami.9b11489

向作者/读者发起求助以获取更多资源

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started