Robust two-dimensional topological insulators in derivatives of group-VA oxides with large band gap: Tunable quantum spin Hall states

出版年份 2019 全文链接

标题

作者

关键词

Group-VA, 2D topological insulators, Band inversion, Surface functionalization, Strain engineering, Quantum spin-Hall state

出版物

Volume 15, Issue -, Pages 163-170

出版商

Elsevier BV

发表日期

2019-01-31

DOI

10.1016/j.apmt.2019.01.006

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