Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides

Morphology and surface chemistry engineering toward pH-universal catalysts for hydrogen evolution at high current density

(2019) Yuting Luo et al.   Nature Communications

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

(2018) Zhengyang Cai et al.   CHEMICAL REVIEWS

Atomically thin p–n junctions based on two-dimensional materials

(2018) Riccardo Frisenda et al.   CHEMICAL SOCIETY REVIEWS

Two-dimensional electronic transport and surface electron accumulation in MoS2

(2018) M. D. Siao et al.   Nature Communications

Optical visualization of MoS2 grain boundaries by gold deposition

(2018) Lulu Sun et al.   Science China-Materials

Topography preserved microwave plasma etching for top-down layer engineering in MoS2and other van der Waals materials

(2017) Abin Varghese et al.   Nanoscale

A microprocessor based on a two-dimensional semiconductor

(2017) Stefan Wachter et al.   Nature Communications

High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

(2016) Bilu Liu et al.   ACS Nano

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

(2016) Jian Gao et al.   ADVANCED MATERIALS

Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers

(2016) Sujay B. Desai et al.   ADVANCED MATERIALS

Layer-by-layer thinning of two-dimensional MoS2 films by using a focused ion beam

(2016) Ding Wang et al.   Nanoscale

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Oriented Growth of Gold Nanowires on MoS2

(2015) Daisuke Kiriya et al.   ADVANCED FUNCTIONAL MATERIALS

Direct Bandgap Transition in Many-Layer MoS2by Plasma-Induced Layer Decoupling

(2015) Rohan Dhall et al.   ADVANCED MATERIALS

A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2

(2015) Youngjo Jin et al.   ADVANCED MATERIALS

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

(2015) Bilu Liu et al.   ADVANCED MATERIALS

Controlled Doping of Large-Area Trilayer MoS2with Molecular Reductants and Oxidants

(2015) Alexey Tarasov et al.   ADVANCED MATERIALS

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

(2015) Xin Zhang et al.   CHEMICAL SOCIETY REVIEWS

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

(2015) Hua-Min Li et al.   Nature Communications

Exfoliation of large-area transition metal chalcogenide single layers

(2015) Gábor Zsolt Magda et al.   Scientific Reports

Enhancement of Photovoltaic Response in Multilayer MoS2 Induced by Plasma Doping

(2014) Sungjin Wi et al.   ACS Nano

Large-Area Atomically Thin MoS2 Nanosheets Prepared Using Electrochemical Exfoliation

(2014) Na Liu et al.   ACS Nano

Chemical vapor deposition growth of monolayer MoSe2 nanosheets

(2014) Jonathan C. Shaw et al.   Nano Research

CVD synthesis of large-area, highly crystalline MoSe2atomic layers on diverse substrates and application to photodetectors

(2014) Jing Xia et al.   Nanoscale

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Photoluminescence of freestanding single- and few-layerMoS2

(2014) Nils Scheuschner et al.   PHYSICAL REVIEW B

Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping

(2013) Shinichiro Mouri et al.   NANO LETTERS

Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

(2013) Philipp Tonndorf et al.   OPTICS EXPRESS

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Photoluminescence from Chemically Exfoliated MoS2

(2011) Goki Eda et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS