Article
Engineering, Electrical & Electronic
Chi Zhang, Sheng Li, Weihao Lu, Siyang Liu, Yanfeng Ma, Jingwen Huang, Jiaxing Wei, Long Zhang, Weifeng Sun
Summary: This study reveals the unclamped-inductive-switching (UIS) behaviors of GaN-based high-electron-mobility transistors with p-type GaN gate (p-GaN HEMTs) at cryogenic temperature (CT). It is found that the UIS performance of p-GaN HEMTs is not affected by temperature, and the resonant circuit and inverse-piezoelectric effect are identified as key factors in the UIS process. These findings indicate the superiority of p-GaN HEMTs for special applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Jia Zhuang, Grayson Zulauf, Jaume Roig-Guitart, James Plummer, Juan Rivas
Summary: This article investigates the trapping dynamics related to C-oss in GaN HEMT, identifying that traps with shallow energy levels are responsible for charge imbalance and energy dissipation under large-signal excitations, while deep traps cause hysteresis under small-signal conditions. By identifying dominant trap types and energy levels, insights on optimizing device stack design for high-frequency applications can be gained.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Mohammad Samizadeh Nikoo, Riyaz Abdul Khadar, Armin Jafari, Minghua Zhu, Elison Matioli
Summary: The study discovered unexpected resonances in GaN-on-Si HEMTs, leading to energy losses in C-OSS. A wafer-level measurement technique was proposed to evaluate these losses, revealing the Silicon substrate as the main origin.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Aniruddhan Gowrisankar, Vanjari Sai Charan, Hareesh Chandrasekar, Anirudh Venugopalarao, R. Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Summary: This article reports the performance of compensation doping-free aluminum gallium-nitride (AlGaN)/gallium nitride (GaN) high-electron mobility transistors (HEMTs) on Silicon for RF applications using a polarization-graded buffer scheme. A resistive buffer is engineered using a compositionally reverse-graded AlGaN (g-AlGaN) layer, eliminating the need for compensation dopants. Transistors with 0.35 μm gate length and source-connected field plates showed a maximum drain current of 1 A/mm and OFF-state breakdown voltage of 144 V. RF performance of HEMTs on these polarization-graded buffers achieved a peak ft/fmax of 49.2/86.4 GHz.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Ruizhe Zhang, Qihao Song, Qiang Li, Yuhao Zhang
Summary: This article investigates the ruggedness of GaN high electron mobility transistors (HEMTs) in continuous, high-frequency, overvoltage switching. Four commercial p-gate GaN HEMTs from multiple vendors were tested, revealing new failure mechanisms at high frequency and decreased breakdown voltage (BVDYN) due to carrier trapping. The article also provides a simple method to identify intrinsic BVDYN and filter out devices with extrinsic failure mechanisms.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Qihao Song, Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang
Summary: This study fills the gap in the comprehensive investigation of surge-energy robustness of cascode GaN HEMTs. It is found that the cascode withstands surge energy by the overvoltage capability of the GaN HEMT and accompanied avalanche in the Si MOSFET. In single-event UIS tests, the cascode fails at a lower peak overvoltage than its static breakdown voltage. In repetitive UIS tests, the failure boundary is frequency dependent.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Peng Xue, Francesco Iannuzzo
Summary: This article presents a comprehensive study on the occurrence mechanism, instability analysis, and suppression methods of self-sustained turn-OFF oscillation that occurs on cascode gallium nitride high electron mobility transistors (cascode GaN HEMTs). It analyzes the oscillation waveforms to determine the occurrence of the oscillation is due to test circuit instability and identifies the impact of load current, dc bus voltage, and gate resistance on the oscillation through double pulse tests. A small-signal ac model of the resonant circuit is derived to investigate its instability and analyze the influences of various parameters on the self-sustained oscillation. The article reveals possible methods to suppress the oscillation, which are validated by experimental data and simulation results.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Furkan Karakaya, Ozturk Sahin Alemdar, Ozan Keysan
Summary: This article presents an ultrafast short-circuit protection technique for GaN HEMTs, which senses the voltage induced by the high slew rate of short-circuit current on the high-frequency power loop inductance resulting from PCB layout. The proposed protection technique can quickly detect and clear short-circuit faults, and is suitable for symmetric layout design.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Injun Hwang, Soogine Chong, Dong-Chul Shin, Sun-Kyu Hwang, Younghwan Park, Boram Kim, Joonyong Kim, Jaejoon Oh, Jun Hyuk Park, Min Chul Yu, Woochul Jeon, Jai Kwang Shin, Jongseob Kim
Summary: The research suggests using wafer level transient voltage measurement (WLTVM) to estimate the short circuit capability of AlGaN/GaNHEMT devices. The study found that short circuit failure is mainly attributed to degradation in the drift region. By measuring transient potential changes, it is possible to predict short circuit failures and take timely action.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jianping Wu, Wuji Meng, Fanghua Zhang, Guangdong Dong, Jianjun Shu
Summary: This article focuses on the interference mechanism of dv/dt noise on GaN HEMTs short-circuit protection circuits, proposing an improved solution by adding a discharging capacitor to enhance noise immunity. By optimizing key parameters, designers can evaluate the noise immunity of protection circuits with different parameters during the design processes.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Yi Zhang, Cai Chen, Yue Xie, Teng Liu, Yong Kang, Han Peng
Summary: This article proposes a high-efficiency adaptive method for dynamically adjusting the dead time of GaN inverters to accommodate different operating conditions. The improved model allows for accurate dead time adjustment without the need for additional sensors. Experimental results demonstrate that the dynamic adjustment method significantly reduces power loss.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Daniel M. Fleetwood, En Xia Zhang, Ronald D. Schrimpf, Sokrates T. Pantelides
Summary: An overview is presented of the effects of displacement damage, total-ionizing dose, and single-event effects in AlGaN/GaN HEMTs. High-fluence proton-induced displacement damage creates defects in the crystal structure. The response of DD/TID is strongly affected by the bias applied during irradiation. GaN-based HEMTs are particularly vulnerable to single-event effects, especially single-event burnout. Significant device-to-device variations in single-event burnout response exist in space systems.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
C. Ngom, V Pouget, M. Zerarka, F. Coccetti, A. Touboul, M. Matmat, O. Crepel, S. Jonathas, G. Bascoul
Summary: Backside laser testing of gallium nitride (GaN) power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate was performed. The laser/device interaction was described, and two different kinds of transients were observed at the gate electrode and analyzed, allowing the identification of sensitive regions of the devices and generation of destructive events.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Automation & Control Systems
Yihang Jia, Hongfei Wu, Liu Yang, Xinyu Xu, Yue Liu, Fan Yang, Yan Xing
Summary: This article investigates a cost-effective totem-pole power factor correction converter with high-frequency gallium nitride high electron-mobility transistors and low-frequency Si diodes. The reverse recovery characteristics of low-frequency diodes were experimentally evaluated, revealing the impact of negative current on switching frequency and the necessity of adopting an adaptive off-time soft-switching strategy.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Zhiyuan Qi, Yunqing Pei, Laili Wang, Kangping Wang, Mengyu Zhu, Cheng Zhao, Qingshou Yang, Yongmei Gan
Summary: This article presents an accurate analytical model of GaN HEMTs to optimize deadtime for higher efficiency in power electronics systems. Validated through simulation and experiment, the method proves to be effective and can improve efficiency by up to 8%.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
M. Ruzzarin, M. Meneghini, A. Barbato, V. Padovan, O. Haeberlen, M. Silvestri, T. Detzel, G. Meneghesso, E. Zanoni
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Engineering, Electrical & Electronic
Luca Sayadi, Giuseppe Iannaccone, Oliver Haeberlen, Gianluca Fiori, Manuel Tomberger, Lauri O. Knuuttila, Gilberto Curatola
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Engineering, Electrical & Electronic
Luca Sayadi, Giuseppe Iannaccone, Sebastien Sicre, Oliver Haeberlen, Gilberto Curatola
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Engineering, Electrical & Electronic
David Menzi, Dominik Bortis, Grayson Zulauf, Morris Heller, Johann W. Kolar
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2020)
Article
Nanoscience & Nanotechnology
Jinming Sun, Oliver Haeberlen, Clemens Ostermaier, Gerhard Prechtl, Ramakrishna Tadikonda, Eric Persson, Reenu Garg, Mohamed Imam, Sameh Khalil, Alain Charles
Summary: The importance of adding a p-GaN drain to a conventional gate-injection transistor (GIT) to form a hybrid drain embedded GIT in suppressing dynamic Rdson is highlighted in this passage. The research shows that a high concentration of intentionally doped carbon plays a crucial role in controlling the vertical leakage and limiting the injected hole current to its DC level, but under fast switching, the response lag of the carbon trap can result in a significantly higher hole injection current.
Article
Engineering, Electrical & Electronic
Morris J. Heller, Florian Krismer, Johann W. Kolar
Summary: This article presents a model for calculating the conducted EMI noise of a dual three-phase active bridge power factor correction (PFC) rectifier. Based on the model, an EMI filter is designed for the D3AB converter topology and validated through hardware prototype measurements. The experimental results show that the level of conducted EMI noise increases with increasing load on the secondary side, but the overall hardware prototype meets the required specifications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Morris J. Heller, Florian Krismer, Johann W. Kolar
Summary: This paper proposes a new duty-cycle dependent phase shift modulation scheme to address the low-frequency power pulsations caused by different line frequencies at the ac ports of the D3ABC converter. The proposed scheme substantially increases the theoretical maximum transmittable power between the primary and secondary sides compared to previous work.
IEEE OPEN JOURNAL OF POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Andrea Minetto, Bernd Deutschmann, Nicola Modolo, Arianna Nardo, Matteo Meneghini, Enrico Zanoni, Luca Sayadi, Gerhard Prechtl, Sebastien Sicre, Oliver Haeberlen
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
