Quantum Transport Properties of Industrial Si28/SiO228

Quantum dots with split enhancement gate tunnel barrier control

(2019) S. Rochette et al.   APPLIED PHYSICS LETTERS

A low-disorder metal-oxide-silicon double quantum dot

(2019) J.-S. Kim et al.   APPLIED PHYSICS LETTERS

Fidelity benchmarks for two-qubit gates in silicon

(2019) W. Huang et al.   NATURE

A crossbar network for silicon quantum dot qubits

(2018) Ruoyu Li et al.   Science Advances

Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits

(2018) L. Petit et al.   PHYSICAL REVIEW LETTERS

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

(2018) V. Mazzocchi et al.   JOURNAL OF CRYSTAL GROWTH

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%

(2017) Jun Yoneda et al.   Nature Nanotechnology

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

(2017) L. M. K. Vandersypen et al.   npj Quantum Information

Valley splitting of single-electron Si MOS quantum dots

(2016) John King Gamble et al.   APPLIED PHYSICS LETTERS

A two-qubit logic gate in silicon

(2015) M. Veldhorst et al.   NATURE

An addressable quantum dot qubit with fault-tolerant control-fidelity

(2014) M. Veldhorst et al.   Nature Nanotechnology

Storing quantum information for 30 seconds in a nanoelectronic device

(2014) Juha T. Muhonen et al.   Nature Nanotechnology

Isotope engineering of silicon and diamond for quantum computing and sensing applications

(2014) Kohei M. Itoh et al.   MRS Communications

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

(2013) C. H. Yang et al.   Nature Communications

Spin relaxation and coherence times for electrons at theSi/SiO2interface

(2010) S. Shankar et al.   PHYSICAL REVIEW B

Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots

(2010) Dimitrie Culcer et al.   PHYSICAL REVIEW B

Electron Spin Decoherence in Isotope-Enriched Silicon

(2010) Wayne M. Witzel et al.   PHYSICAL REVIEW LETTERS

Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

(2009) E. P. Nordberg et al.   PHYSICAL REVIEW B

Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET

(2009) L. A. Tracy et al.   PHYSICAL REVIEW B