Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
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Title
Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 19, Pages 191104
Publisher
AIP Publishing
Online
2016-11-10
DOI
10.1063/1.4967501
References
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Related references
Note: Only part of the references are listed.- Hybrid tunnel junction contacts to III–nitride light-emitting diodes
- (2016) Erin C. Young et al. Applied Physics Express
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- GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions
- (2015) Shoou-Jinn Chang et al. IEEE ELECTRON DEVICE LETTERS
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- Plasmonic Films Can Easily Be Better: Rules and Recipes
- (2015) Kevin M. McPeak et al. ACS Photonics
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- (2011) Arthur H. Reading et al. OPTICS EXPRESS
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- (2010) Yukio Narukawa et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact
- (2009) June O Song et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- High-quality nonpolarm-plane GaN substrates grown by HVPE
- (2008) Kenji Fujito et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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