Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors

Title
Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 19, Pages 193505
Publisher
AIP Publishing
Online
2016-11-12
DOI
10.1063/1.4967434

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