Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors
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Title
Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 19, Pages 193505
Publisher
AIP Publishing
Online
2016-11-12
DOI
10.1063/1.4967434
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