Impact of crystalline damage on a vertically integrated junctionless nanowire transistor

Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

(2016) Jae Hur et al.   IEEE ELECTRON DEVICE LETTERS

Impact of extension implantation conditions of fin field-effect transistors on gate-induced drain leakage

(2016) Takashi Matsukawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

(2015) Jiewen Fan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Understanding short channel mobility degradation by accurate external resistance decomposition and intrinsic mobility extraction

(2015) Tao Chu et al.   JOURNAL OF APPLIED PHYSICS

Vertically Integrated Multiple Nanowire Field Effect Transistor

(2015) Byung-Hyun Lee et al.   NANO LETTERS

Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors

(2013) Jae Woo Lee et al.   APPLIED PHYSICS LETTERS

Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate

(2013) Dong-Il Moon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanowire transistors without junctions

(2010) Jean-Pierre Colinge et al.   Nature Nanotechnology

Dopant activation in ion implanted silicon by microwave annealing

(2009) T. L. Alford et al.   JOURNAL OF APPLIED PHYSICS