Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics

标题
Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics
作者
关键词
-
出版物
Applied Physics Express
Volume 9, Issue 4, Pages 041501
出版商
Japan Society of Applied Physics
发表日期
2016-03-17
DOI
10.7567/apex.9.041501

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