Electromechanical properties of amorphous indium–gallium–zinc-oxide transistors structured with an island configuration on plastic

Published 2016 View Full Article

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Title
Electromechanical properties of amorphous indium–gallium–zinc-oxide transistors structured with an island configuration on plastic
Authors
Keywords
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Journal
Applied Physics Express
Volume 9, Issue 3, Pages 031101
Publisher
Japan Society of Applied Physics
Online
2016-01-29
DOI
10.7567/apex.9.031101

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