Electromechanical properties of amorphous indium–gallium–zinc-oxide transistors structured with an island configuration on plastic

标题
Electromechanical properties of amorphous indium–gallium–zinc-oxide transistors structured with an island configuration on plastic
作者
关键词
-
出版物
Applied Physics Express
Volume 9, Issue 3, Pages 031101
出版商
Japan Society of Applied Physics
发表日期
2016-01-29
DOI
10.7567/apex.9.031101

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