Article
Chemistry, Physical
Ya-Cong Lu, Zhen-Feng Zhang, Xun Yang, Gao-Hang He, Chao-Nan Lin, Xue-Xia Chen, Jin-Hao Zang, Wen-Bo Zhao, Yan-Cheng Chen, Lei-Lei Zhang, Yi-Zhe Li, Chong-Xin Shan
Summary: This study demonstrates high-performance solar-blind photodetectors based on Sn-doped Ga2O3 microwires, with excellent light/dark current ratio and responsivity. A solar-blind photodetector linear array is developed using a patterned-electrodes method, producing clear solar-blind images.
Article
Engineering, Electrical & Electronic
Gao-Hui Shen, Zeng Liu, Mao-Lin Zhang, Yu-Feng Guo, Wei-Hua Tang
Summary: This paper introduces a 16 x 16 Ga2O3 photodetector array, in which Ga2O3 thin film was deposited on a c-sapphire substrate using metal-organic chemical vapor deposition. The array device was constructed through UV photolithography, lift-off, and electron-beam evaporation techniques. The photodetector showed good wavelength selectivity with a high rejection ratio of 8 x 10(3). It exhibited a fast response ability, with a rise time of 6 ms and a decay time of 48 ms, when excited by a laser. The dark current of the 256 pixels in the array ranged from 2 pA to 4 pA, without any disparity.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Multidisciplinary
Gaohui Shen, Zeng Liu, Kai Tang, Shulin Sha, Lei Li, Chee-Keong Tan, Yufeng Guo, Weihua Tang
Summary: This study introduces an 8x8 Ga2O3 solar-blind ultraviolet photodetector array with high photo-response performance and uniform responsivity, which is of great significance for developing Ga2O3-based optoelectronic device applications.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES
(2023)
Article
Nanoscience & Nanotechnology
Manni Chen, Zhipeng Zhang, Zesheng Lv, Runze Zhan, Huanjun Chen, Hao Jiang, Jun Chen
Summary: Polycrystalline Ga2O3 nanostructure-based thin films were prepared and characterized for their microstructure, optical properties, and photodetector performance. Annealed Ga2O3 thin films exhibited larger grains, shorter UV absorption wavelength, low dark current, and high responsivity rejection ratio. The fast response of the photodetector was attributed to the reduced defects and grain boundaries in the annealed Ga2O3 thin film.
ACS APPLIED NANO MATERIALS
(2022)
Article
Chemistry, Physical
Zeyuan Fei, Zimin Chen, Weiqu Chen, Shujian Chen, Zhisheng Wu, Xing Lu, Gang Wang, Jun Liang, Yanli Pei
Summary: In this work, hetero-epitaxy of epsilon-Ga2O3 thin films were successfully grown on c-plane sapphire using metal-organic chemical vapor deposition (MOCVD). The impacts of different oxygen precursors on crystal structure, optical absorption, cathodoluminescence, and photoelectric properties were studied. Deep-ultraviolet (DUV) photodetectors based on the epsilon-Ga2O3 thin films were fabricated, and the device performance was compared. The results showed that epsilon-Ga2O3 grown using H2O as the precursor exhibited faster response speed and higher responsivity, indicating its potential for DUV photodetectors.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Engineering, Electrical & Electronic
Yu-Song Zhi, Zeng Liu, Shao-Hui Zhang, Shan Li, Zu-Yong Yan, Pei-Gang Li, Wei-Hua Tang
Summary: This article describes a 16 x 4 linear array of beta-Ga2O3-based metal-semiconductor-metal photodetector for solar-blind sensing at 254 nm wavelength. The beta-Ga2O3 film is grown using MOCVD equipment, and the photodetectors are constructed with standard processes. The photodetectors exhibit excellent performance with key parameters like photo responsivity and detectivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Yaping Li, Caihao Deng, Bo Huang, Shuai Yang, Jintao Xu, Genghui Zhang, Sujuan Hu, Dan Wang, Baiquan Liu, Zhong Ji, Linfeng Lan, Junbiao Peng
Summary: High-performance solar-blind (200-280 nm) ultraviolet (UV) photodetectors based on a low-cost thin-film ZnO/Ga2O3 heterojunction are constructed. The optimized photodetector shows high spectral selectivity, a high photo-to-dark current ratio, and fast response speed under 254 nm UV light. The use of a gate electrode in the three-terminal phototransistor amplifies responsivity and increases the photo-to-dark current ratio, while the built-in electric field at the ZnO/Ga2O3 heterojunction controls electron distribution and enhances device performance.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Qinghua Ren, Wenhui Xu, Zhenghao Shen, Tiangui You, Qiang Liu, Chenhe Liu, Lantian Zhao, Lingli Chen, Wenjie Yu
Summary: A solar-blind photodetector based on single crystal beta-Ga2O3 thin film transferred on a SiC substrate with an Al2O3 buffer layer was prepared using a unique ion-cutting process. The photodetector exhibited excellent performance with high spectra selectivity, extremely low dark current, high photocurrent, high sensitivity to 254 nm UV light, fast response time, and stability, paving the way for high-performance photodetectors based on single crystal semiconductor films.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Rui Xu, Xiaocui Ma, Yanhui Chen, Yang Mei, Leiying Ying, Baoping Zhang, Hao Long
Summary: In this work, beta-Ga2O3 thin films were deposited on GaN template and sapphire substrates by MOCVD. Corresponding beta-Ga2O3 thin film PDs were prepared. Oxygen vacancies were found to determine the performance differences between the two heteroepitaxial beta-Ga2O3 thin film PDs. The photoconductive model of the MSM structure was announced, highlighting the key role of oxygen vacancies in this observation. This work paved the way for further optimization of heteroepitaxial beta-Ga2O3 thin film PDs.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Review
Physics, Applied
Xiaohu Hou, Yanni Zou, Mengfan Ding, Yuan Qin, Zhongfang Zhang, Xiaolan Ma, Pengju Tan, Shunjie Yu, Xuanzhe Zhou, Xiaolong Zhao, Guangwei Xu, Haiding Sun, Shibing Lon
Summary: Research on gallium oxide for deep-ultraviolet solar-blind detection has attracted significant interest due to its unique material properties and potential applications. Various crystal phases and polymorphous Ga2O3-based solar-blind photodetectors have been studied, with a focus on enhancing performance through techniques such as doping and annealing. DUV imaging technologies based on Ga2O3 SBPDs are systematically summarized, demonstrating promising future prospects for applications.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Chao Wu, Fengmin Wu, Haizheng Hu, Shunli Wang, Aiping Liu, Daoyou Guo
Summary: This review summarizes the recent research progress on self-powered solar-blind photodetectors based on Ga2O3. The detectors are classified into different types, and the fundamental properties of Ga2O3, the basic working principles of self-powered photodetectors, and the device processing developments are summarized. Finally, conclusions regarding recent advances, remaining challenges, and prospects are presented and discussed.
MATERIALS TODAY PHYSICS
(2022)
Article
Chemistry, Physical
Zhenfeng Zhang, Chaonan Lin, Xun Yang, Yongzhi Tian, Chaojun Gao, Kaiyong Li, Jinhao Zang, Xigui Yang, Lin Dong, Chongxin Shan
Summary: Diamond, as a promising ultrawide-bandgap semiconductor, has unique properties that make it suitable for deep-ultraviolet optoelectronics and high-power electronics applications. However, the small growth size of single-crystal diamond has limited its optoelectronics applications. In contrast, polycrystalline diamond, with the advantage of large-area growth, shows potential for use in solar-blind photodetectors with good responsivity and short response time.
Article
Chemistry, Physical
Shuren Zhou, Qiqi Zheng, Chenxi Yu, Zhiheng Huang, Lingrui Chen, Hong Zhang, Honglin Li, Yuanqiang Xiong, Chunyang Kong, Lijuan Ye, Wanjun Li
Summary: Photodetectors are widely used as sensing units in imaging systems. Researchers have constructed a photodetector array (5 x 4) consisting of 20 photodetector units using low-cost magnetron sputtering and mask processes. The photodetector units show excellent responsivity, detectivity, light-to-dark ratio, and fast photoresponse speed, demonstrating high uniformity and high performance for solar-blind imaging.
Article
Nanoscience & Nanotechnology
Xiao Tang, Yi Lu, Shibin Krishna, Wedyan Babatain, Mohamed Ben Hassine, Che-Hao Liao, Na Xiao, Zhiyuan Liu, Xiaohang Li
Summary: In this study, a high-quality metastable kappa-phase Ga2O3 thin film was epitaxially grown on a flexible mica substrate. The developed flexible photodetector exhibited record-high performance for flexible Ga2O3 photodetectors and demonstrated excellent flexibility and mechanical stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Lingxing Xiong, Lei Zhang, Qipu Lv, Tao Li, Wenqing Song, Jiawei Si, Wenhui Zhu, Liancheng Wang
Summary: A bendable and thermally stable solar-blind UV photodetector based on Ni/a-Ga2O3/a-AlN/Cu foil structure has been demonstrated, showing stable UV response characteristics with different bending radii and temperatures, high responsivity, and fast response time, suitable for harsh environments such as high-power bendable electron devices, flame detection, etc.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Physical
S. Karthick, A. Santha, D. Ganesh, K. Thirupugalmani, S. Ganesamoorthy, A. K. Chaudhary, S. Brahadeeswaran
Summary: The study presents the growth, optical properties, laser damage, and THz wave generation studies of the potential organic material OH1. The composition and crystalline phase were verified, functional groups confirmed, and intermolecular interactions and packing structures decoded.OH1 crystals demonstrated resistance to high laser fluences and were successfully used for the generation of intense THz waves.
JOURNAL OF MOLECULAR STRUCTURE
(2021)
Article
Materials Science, Multidisciplinary
M. K. Raseel Rahman, B. Riscob, Budhendra Singh, R. Bhatt, Indranil Bhaumik, S. Ganesamoorthy, N. Vijayan, A. K. Karnal, Igor Bdikin, Lekha Nair
Summary: The mechanical properties of undoped and Mg-doped LN single crystals grown by the Czochralski technique were studied using nanoindentation, with structural investigations by powder XRD analysis and Raman spectroscopy. The lattice parameters and strain development due to Mg doping were analyzed, as well as the influence on lattice vibrations. Results showed optimal Mg doping levels for enhanced mechanical strength of lithium niobate crystals.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
M. K. Raseel Rahman, B. Riscob, Rajeev Bhatt, Indranil Bhaumik, Sarveswaran Ganesamoorthy, Narayanasamy Vijayan, Godavarthi Bhagavannarayana, Ashwini Kumar Karnal, Lekha Nair
Summary: Congruent lithium niobate single crystals co-doped with Ru and Mg have been successfully grown, showing good crystalline quality and optical transparency. Co-doping resulted in a slight decrease in refractive indices and a rise in band gap energy, with changes in birefringence and second harmonic generation efficiency.
Article
Materials Science, Multidisciplinary
Suchita Dhankhar, Durga Sankar Vavilapalli, Gopal Bhalerao, S. Ganesamoorthy, Shamima Hussain, K. Baskar, Shubra Singh
Summary: This study reports on the growth of Ca2Fe2O5 single crystals under different atmospheres and compares their structural and spectroscopic properties. The results show that the growth atmosphere significantly influences the oxidation state of iron ions and the presence of oxygen vacancies in the crystals.
BULLETIN OF MATERIALS SCIENCE
(2022)
Article
Crystallography
M. Suganya, K. Ganesan, P. Vijayakumar, Amirdha Sher Gill, S. K. Srivastava, Ch Kishan Singh, R. M. Sarguna, P. K. Ajikumar, S. Ganesamoorthy
Summary: Raman and photoluminescence spectroscopic studies were conducted to investigate the structural disorder induced by oxygen vacancies in Gd2Ti2O7-delta single crystals. The results show that the oxygen vacancies decrease and the structural ordering improves after thermal annealing.
CRYSTAL RESEARCH AND TECHNOLOGY
(2022)
Article
Crystallography
K. Arjun, D. Ganesh, S. Karthick, A. Santha, M. Venkatesh, S. Ganesamoorthy, S. Brahadeeswaran, A. K. Chaudhary
Summary: In this study, single crystals of L-arginine phosphate monohydrate were successfully grown using a solution cooling method, and their ability to generate Terahertz waves was explored. The crystals exhibited a high THz output power enhancement efficiency and varying refractive index and absorption coefficient in the THz range. The LAP crystal showed great potential in the field of Terahertz technology.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Physics, Condensed Matter
Indranil Bhaumik, V. L. Ananthu Vijayan, Rajeev Bhatt, Mohammad Soharab, Sarveswaran Ganesamoorthy, Ashwani Kumar Karnal
Summary: The effect of chromium doping on bismuth silicate single crystals was studied, showing an increase in lattice parameter and a decrease in bandgap with higher Cr concentration. Emission peak was observed at around 470nm for 0.05% and 0.25% Cr-doped samples under 420nm excitation. Additionally, the refractive index decreased with increasing Cr concentration in the lattice.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2021)
Article
Physics, Condensed Matter
Dhandapani Dhanabalan, Vijayan Ananthu, Kaza Venkata Akshita, Sudipto Bhattacharya, Elangovan Varadarajan, Sarveswaran Ganesamoorthy, Sridharan Moorthy Babu, Venkatachalam Natarajan, Sudeep Verma, Meenakshi Srivatsava, Sebastian Lourdudoss
Summary: Beta-Ga2O3 is a promising wide-bandgap material for optoelectronic applications and as a conducting substrate for GaN-based device technologies. Single crystals of undoped beta-Ga2O3 are grown using the optical floating zone technique with compressed dry air as growth atmosphere. The properties of beta-Ga2O3 are highly anisotropic, and efforts are made to optimize processing recipes for wafers suitable for device development. Fabrication of Schottky diodes based on Pt/Ti/Au-beta-Ga2O3-Ti/Au device structures is attempted, with device characteristics discussed in detail.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2022)
Article
Physics, Applied
Sandeep Kumar, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
Summary: This study presents vertical Ga2O3 Schottky barrier diodes (SBDs) with a staircase field plate on a deep trench filled with SiO2, which effectively alleviates electric field concentration in the Ga2O3 drift layer and the SiO2 layer at high reverse voltage operation. The Ga2O3 SBDs demonstrate superior device characteristics with low on-resistance and high off-state breakdown voltage.
APPLIED PHYSICS EXPRESS
(2022)
Article
Physics, Applied
Anisha Kalra, Usman Ul Muazzam, R. Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Summary: This Perspective discusses the current status and challenges of ultrawide bandgap (UWBG) semiconductor-based deep-UV photodetectors in real-world applications. It introduces a new comprehensive figure of merit to evaluate their performance by considering gain, noise, and bandwidth. The article also raises the question of whether these detectors will ever find significant applications and be used in space-borne platforms for deep-space imaging.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Usman Ul Muazzam, Prasad S. Chavan, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Summary: This paper reports the growth of crystalline kappa-Ga2O3 using CVD on sapphire, with detailed analysis of its properties including phase identification, bandgap estimation, excitonic binding energy, spectroscopic characteristics, and electrical properties.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Review
Chemistry, Physical
Venkatasubramanian Sivasubramanian, Sarveswaran Ganesamoorthy, Seiji Kojima
Summary: Compositionally disordered perovskite compounds have been a popular topic of research in recent years. These materials exhibit colossal piezoelectric and electrostrictive effects. The physical behavior of these compounds is influenced by the nucleation and growth of polar nanoregions (PNRs), which are local dipolar regions. The relaxation dynamics of PNRs show various stages, as revealed through Raman scattering and Brillouin scattering studies.
Article
Materials Science, Multidisciplinary
Usman Ul Muazzam, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Summary: In this study, the optical properties of Ga2O3 thin films deposited at different temperatures using mist-Chemical Vapor Deposition were investigated. The crystalline quality of the films was found to correlate with the deposition temperature.
Article
Engineering, Electrical & Electronic
P. Vijayakumar, Edward Prabu Amaladass, K. Ganesan, R. M. Sarguna, Varsha Roy, S. Ganesamoorthy
Summary: We present the indigenous design and development of a laboratory-scale travelling heater method (THM) system for growing detector-grade CdZnTe single crystals. The system was optimized to achieve large grain single crystals through systematic growth experiments. The crystals were evaluated for their crystalline nature and quality, and tested for gamma ray detection. The successful gamma ray detection with relatively high mu tau product demonstrates the success of the indigenous THM system in growing detector-grade CdZnTe single crystals.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Sandeep Vura, Usman Ul Muazzam, Vishnu Kumar, Sai Charan Vanjari, Rangarajan Muralidharan, Nath Digbijoy, Pavan Nukala, Srinivasan Raghavan
Summary: In this report, direct epitaxial integration of beta-Ga2O3 on a Si(100) substrate is demonstrated, providing opportunities for the development of deep-UV optoelectronics.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
