Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfOx Memristors

Published 2019 View Full Article

Authors

Keywords

Journal

IEEE ELECTRON DEVICE LETTERS

Volume 40, Issue 7, Pages 1068-1071

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2019-05-23

DOI

10.1109/led.2019.2917935

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started

IEEE ELECTRON DEVICE LETTERS

Ask authors/readers for more resources

Protocol

Reagent

Reprint

Publish scientific posters with Peeref

Ask a Question. Answer a Question.