Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation

Title
Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation
Authors
Keywords
Sapphire Substrate, Beam Size, Focal Position, Single Lead, Light Extraction Efficiency
Journal
Publisher
Springer Nature
Online
2016-03-07
DOI
10.1007/s00339-016-9928-7

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