Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric

Published 2019 View Full Article

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Title
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Authors
Keywords
MoS, 2, FETs, Al, 2, O, 3, dielectric, Plasma treatment, Mobility
Journal
APPLIED SURFACE SCIENCE
Volume 481, Issue -, Pages 1028-1034
Publisher
Elsevier BV
Online
2019-03-21
DOI
10.1016/j.apsusc.2019.03.139

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