Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric

标题
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
作者
关键词
MoS, 2, FETs, Al, 2, O, 3, dielectric, Plasma treatment, Mobility
出版物
APPLIED SURFACE SCIENCE
Volume 481, Issue -, Pages 1028-1034
出版商
Elsevier BV
发表日期
2019-03-21
DOI
10.1016/j.apsusc.2019.03.139

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