Journal
COATINGS
Volume 9, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/coatings9050281
Keywords
beta-Ga2O3; MOCVD; VI; III ratio
Categories
Funding
- National Natural Science Foundation of China [61774072, 61376046, 61674068, 61404070]
- Science and Technology Developing Project of Jilin Province [20170204045GX, 20150519004JH, 20160101309JC]
- National Key Research and Development Program [2016YFB0401801]
- Program for New Century Excellent Talents in University [NCET-13-0254]
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beta-Ga2O3 films were grown on sapphire (0001) substrates with various O/Ga (VI/III) ratios by metal organic chemical vapor deposition. The effects of VI/III ratio on growth rate, structural, morphological, and Raman properties of the films were systematically studied. By varying the VI/III ratio, the crystalline quality obviously changed. By decreasing the VI/III ratio from 66.9 x 10(3) to 11.2 x 10(3), the crystalline quality improved gradually, which was attributed to low nuclei density in the initial stage. However, crystalline quality degraded with further decrease of the VI/III ratio, which was attributed to excessive nucleation rate.
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