4.7 Article

Co3O4 thin films prepared by hollow cathode discharge

Journal

SURFACE & COATINGS TECHNOLOGY
Volume 366, Issue -, Pages 303-310

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2019.03.010

Keywords

Cobalt oxide; Co3O4; Hollow cathode discharge; Magnetron sputtering; Thin films

Funding

  1. Ministry of Education, Youth and Sports of the Czech Republic [LO1409]
  2. Grant Agency of the Czech Republic [17-08389S]
  3. Operational Programme Research, Development and Education - European Structural and Investment Funds
  4. Czech Ministry of Education, Youth and Sports [SOLID21 - CZ.02.1.01/0.0/0.0/16_019/0000760]

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Semiconducting crystalline Co3O4 thin films were deposited on glass, stainless steel and Si substrates using three different PVD methods: (i) RF magnetron sputtering, (ii) high-power impulse magnetron sputtering (HiPIMS), and (iii) hollow cathode discharge (HCD). All layers were sputtered from pure cobalt target (or nozzle) in reactive atmosphere and post-annealed on air. Properties of deposited layers have been studied and discussed with respect to their potential applications. The surface morphology of the films was analyzed by SEM, their crystalline structure by XRD and Raman spectroscopy, chemical composition by EDS, electrical properties by Van der Pauw method and the specific surface area was measured by standard BET analysis. The layers prepared by the hollow cathode discharge compared to the magnetron-prepared films exhibited higher porosity, higher resistivity, higher activation energy, and higher deposition rate during the sputtering process.

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