Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications

Published 2019 View Full Article

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Title
Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 4, Pages 522-525
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-02-14
DOI
10.1109/led.2019.2899100

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