Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding

标题
Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding
作者
关键词
GaAs/Si, Surface activated bonding, HAXPES, Buried interface
出版物
APPLIED SURFACE SCIENCE
Volume 473, Issue -, Pages 627-632
出版商
Elsevier BV
发表日期
2018-12-22
DOI
10.1016/j.apsusc.2018.12.199

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