Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection
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Title
Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 17, Pages 171103
Publisher
AIP Publishing
Online
2019-05-02
DOI
10.1063/1.5090840
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Related references
Note: Only part of the references are listed.- Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared
- (2018) J.A. Keen et al. INFRARED PHYSICS & TECHNOLOGY
- Room-temperature mid-infrared interband cascade vertical-cavity surface-emitting lasers
- (2016) W. W. Bewley et al. APPLIED PHYSICS LETTERS
- GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm
- (2016) Alexander Andrejew et al. OPTICS LETTERS
- Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
- (2016) A. B. Ikyo et al. Scientific Reports
- Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry
- (2015) Laura Meriggi et al. JOURNAL OF APPLIED PHYSICS
- InAsSb-basednBnphotodetectors: lattice mismatched growth on GaAs and low-frequency noise performance
- (2015) A P Craig et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
- (2013) A. P. Craig et al. APPLIED PHYSICS LETTERS
- InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures
- (2012) Christian Grasse et al. APPLIED PHYSICS LETTERS
- InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations
- (2012) D. Lackner et al. JOURNAL OF APPLIED PHYSICS
- Enhancement of light extraction from light emitting diodes
- (2010) A.I. Zhmakin PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
- LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm)
- (2010) A. S. Golovin et al. TECHNICAL PHYSICS LETTERS
- Photonic crystal LEDs - designing light extraction
- (2009) C. Wiesmann et al. Laser & Photonics Reviews
- Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm
- (2009) Alexander Bachmann et al. NEW JOURNAL OF PHYSICS
- Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes
- (2009) P J Carrington et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes
- (2008) P. J. Carrington et al. APPLIED PHYSICS LETTERS
- Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction
- (2008) Arnaud Ducanchez et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
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