4.6 Article

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 9, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2976551

Keywords

-

Funding

  1. EPSRC [EP/E028209/1]
  2. HMGCC
  3. EU SANDiE Network
  4. Russian Foundation for Basic Research (RFBR) [07-02-01384a]
  5. Russian Academy of Sciences (RAS)
  6. EPSRC [EP/E028209/1] Funding Source: UKRI
  7. Engineering and Physical Sciences Research Council [EP/E028209/1] Funding Source: researchfish

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Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 mu m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region. (c) 2008 American Institute of Physics.

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