A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications

Published 2019 View Full Article

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Title
A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications
Authors
Keywords
AlGaN/AlN/GaN HEMTs, FDM, Dual material, Channel potential, Electric field, Drain current
Journal
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
Volume 103, Issue -, Pages 46-56
Publisher
Elsevier BV
Online
2019-03-07
DOI
10.1016/j.aeue.2019.02.016

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