Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition

Published 2018 View Full Article

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Title
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition
Authors
Keywords
A1: Characterization, A1: Surface structure, A3: Chemical vapor deposition processes, B2: Semiconducting materials
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 507, Issue -, Pages 283-287
Publisher
Elsevier BV
Online
2018-10-30
DOI
10.1016/j.jcrysgro.2018.10.055

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