Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition

出版年份 2018 全文链接

标题

作者

关键词

A1: Characterization, A1: Surface structure, A3: Chemical vapor deposition processes, B2: Semiconducting materials

出版物

JOURNAL OF CRYSTAL GROWTH

Volume 507, Issue -, Pages 283-287

出版商

Elsevier BV

发表日期

2018-10-30

DOI

10.1016/j.jcrysgro.2018.10.055

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