Journal
COATINGS
Volume 8, Issue 11, Pages -Publisher
MDPI
DOI: 10.3390/coatings8110379
Keywords
transition metal carbides (TMCs); chemical vapor deposition (CVD); NbC film; reducing agent; c-plane sapphire; preferential orientation; domain matching epitaxy (DME)
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology [NRF-2018R1D1A1B07050253]
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Transition metal carbides (TMCs) have high melting points, hardness, and chemical stabilities in acidic media. In this work, a chemical vapor deposition method using CH4 as a carbon source and reducing agent was employed to make an NbC film. NbCl5 carried by Ar gas was used as an Nb precursor. An NbC thin film, deposited on a c-plane sapphire, exhibited a preferential orientation of the (111) plane, which can be explained by domain-matching epitaxy. A nanoindentation test showed that the NbC film with the preferential orientation of the (111) plane was stronger than that with a random orientation. Moreover, the results showed that H-2, which is conventionally used as a reducing agent in NbC synthesis, degraded the crystallinity and hardness of the fabricated NbC.
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