Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

(2017) Shengjun Zhou et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H 2 SO 4 and H 3 PO 4 Mixture with Varying Volume Ratio at 230°C

(2017) Jian Shen et al.   ECS Journal of Solid State Science and Technology

Effect of Sputtered AlN Location on the Growth Mechanism of GaN

(2017) Pei-Yu Wu et al.   ECS Journal of Solid State Science and Technology

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H 2 SO 4 and H 3 PO 4 Mixture at Various Temperatures

(2017) Jian Shen et al.   ECS Journal of Solid State Science and Technology

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

(2017) Hongpo Hu et al.   Scientific Reports

The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

(2016) Lin Shang et al.   JOURNAL OF CRYSTAL GROWTH

AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS)

(2016) Jian Shen et al.   ECS Journal of Solid State Science and Technology

Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

(2015) Chen-Hung Tsai et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Analysis of the Gas Phase Kinetics Active during GaN Deposition from NH3 and Ga(CH3)3

(2015) Stefano Ravasio et al.   JOURNAL OF PHYSICAL CHEMISTRY A

Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

(2014) Hsu-Hung Hsueh et al.   INTERNATIONAL JOURNAL OF PHOTOENERGY

GaN-Based Ultraviolet Light Emitting Diodes With Ex Situ Sputtered AlN Nucleation Layer

(2013) W. C. Lai et al.   Journal of Display Technology

Evolution of Bottomc-Plane on Wet-Etched Patterned Sapphire Substrate

(2013) Chien-Chih Chen et al.   ECS Journal of Solid State Science and Technology

The Formation and the Plane Indices of Etched Facets of Wet Etching Patterned Sapphire Substrate

(2012) Yu-Chung Chen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Investigation of GaN Films Grown on Liquid-Phase Deposited SiO2Nanopatterned Sapphire Substrates

(2012) Cheng-Yu Hsieh et al.   ECS Journal of Solid State Science and Technology

Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

(2008) Hung-Cheng Lin et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Stress Reduction and Enhanced Extraction Efficiency of GaN-Based LED Grown on Cone-Shape-Patterned Sapphire

(2008) Jae-Hoon Lee et al.   IEEE PHOTONICS TECHNOLOGY LETTERS