The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

Title
The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate
Authors
Keywords
A1. Nucleation, B1. GaN, B1. Patterned sapphire substrate, B3. Annealing
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 442, Issue -, Pages 89-94
Publisher
Elsevier BV
Online
2016-03-11
DOI
10.1016/j.jcrysgro.2016.03.008

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