Journal
SOLID STATE IONICS
Volume 328, Issue -, Pages 30-34Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ssi.2018.11.004
Keywords
Atomic switch; Resistive switching; ReRAM; Three terminal; Oxygen vacancy; Redox
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Funding
- National Natural Science Foundation of China [61404064, 61874051, U1732136]
- Fundamental Research Funds for the Central Universities [lzujbky-2018-114, lzujbky-2018-115]
- Japan Science and Technology Agency (JST)/CREST Atom Transistor Project
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Three-terminal structures have an advantage over two-terminal structures in logic applications and neuromorphic circuits, However, three-terminal operation based on Valence Change RAM still requires a larger gate bias to form/dissolve a conductive path between the source and the drain, especially for turning off. Here, reduction in gate bias and gate leakage current in nonvolatile operation of oxygen vacancy drift-controlled three-terminal ReRAM is demonstrated by W/Ti (gate)/TaOx (resistance switching layer)/Pt (source), Pt (drain) structure. Introduction of a Ti thin layer between W and TaOx layers prevents a conductive channel formation between gate and source/drain electrodes. Consequently, as-fabricated high resistance between gate and source/drain is kept, resulting in smaller gate leakage current. We also achieved interface engineering on a sidewall structure of Pt (source)/SiO2 (insulator)/Pt (drain) multi-layer, reducing in an operating bias from 10 V to 4 V or less.
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