Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition

Title
Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 8, Issue 3, Pages 1644-1652
Publisher
American Chemical Society (ACS)
Online
2016-01-13
DOI
10.1021/acsami.5b08295

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