Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition

标题
Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 8, Issue 3, Pages 1644-1652
出版商
American Chemical Society (ACS)
发表日期
2016-01-13
DOI
10.1021/acsami.5b08295

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now