Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

Published 2018 View Full Article

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Title
Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid
Authors
Keywords
MoS, 2, –rGO, Resistive switching, Flexible, Low operating voltage, Multilevel storage
Journal
APPLIED SURFACE SCIENCE
Volume 463, Issue -, Pages 947-952
Publisher
Elsevier BV
Online
2018-09-05
DOI
10.1016/j.apsusc.2018.09.022

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