Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

出版年份 2018 全文链接

标题

作者

关键词

MoS, 2, –rGO, Resistive switching, Flexible, Low operating voltage, Multilevel storage

出版物

Volume 463, Issue -, Pages 947-952

出版商

Elsevier BV

发表日期

2018-09-05

DOI

10.1016/j.apsusc.2018.09.022

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