期刊
APPLIED PHYSICS EXPRESS
卷 12, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/aafded
关键词
-
资金
- JSPS KAKENHI [JP16H06421]
- Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency (JST)
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Next-generation power electronics (NEDO)
This paper presents electrical characterization of Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) grown on GaN substrates. The postmetallization annealing (PMA) at 300 degrees C achieved effective reduction of electronic states at the Al2O3/AlGaN interface, leading to improved gate controllability and current linearity of the MOS HEMTs. The MOS HEMT with PMA showed a subthreshold slope of 68 mV dec(-1). In addition, excellent operation stability of the MOS HEMT was observed at high temperatures. Even at 150 degrees C, the HEMT showed low leakage current of 1.5 x 10(-9) A mm(-1) and a threshold voltage drift of only 0.25 V from its room temperature value. (c) 2019 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据