Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

(2017) B. Dieny et al.   REVIEWS OF MODERN PHYSICS

Steplike Switching in Symmetric PbZr0.2Ti0.8O3/CoFeO4/PbZr0.2Ti0.8O3 Heterostructures for Multistate Ferroelectric Memory

(2017) Andra Georgia Boni et al.   Physical Review Applied

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

(2016) Wei Jin Hu et al.   Nature Communications

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Design of a Voltage-Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

(2012) Jia-Mian Hu et al.   ADVANCED MATERIALS

Multilevel Data Storage Memory Using Deterministic Polarization Control

(2011) Daesu Lee et al.   ADVANCED MATERIALS

Materials with perpendicular magnetic anisotropy for magnetic random access memory

(2011) R. Sbiaa et al.   Physica Status Solidi-Rapid Research Letters

Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3Thin Films for Low Cost Nonvolatile Memories

(2010) César Moreno et al.   NANO LETTERS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Anomalous Hall effect

(2010) Naoto Nagaosa et al.   REVIEWS OF MODERN PHYSICS

Spintronics

(2010) S.D. Bader et al.   Annual Review of Condensed Matter Physics

Multibit Storage of Organic Thin-Film Field-Effect Transistors

(2009) Yunlong Guo et al.   ADVANCED MATERIALS

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

(2008) S. Ikeda et al.   APPLIED PHYSICS LETTERS

Magnetic Domain-Wall Racetrack Memory

(2008) S. S. P. Parkin et al.   SCIENCE