Improvement of the precision of lattice parameter determination by nano-beam electron diffraction

Improving Accuracy and Precision of Strain Analysis by Energy-Filtered Nanobeam Electron Diffraction

(2012) Angelika Hähnel et al.   MICROSCOPY AND MICROANALYSIS

Nanobeam Diffraction: Technique Evaluation and Strain Measurement on Complementary Metal Oxide Semiconductor Devices

(2011) P. Favia et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns

(2010) K. Saitoh et al.   Microscopy

Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution

(2010) David Cooper et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Improved precision in strain measurement using nanobeam electron diffraction

(2009) A. Béché et al.   APPLIED PHYSICS LETTERS

Electron diffraction with ten nanometer beam size for strain analysis of nanodevices

(2008) A. Armigliato et al.   APPLIED PHYSICS LETTERS

Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction

(2008) Akio Toda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS