Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

On the feasibility of p-type Ga2O3

(2018) Alexandros Kyrtsos et al.   APPLIED PHYSICS LETTERS

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

(2018) A. Y. Polyakov et al.   APPLIED PHYSICS LETTERS

Iron and intrinsic deep level states in Ga2O3

(2018) M. E. Ingebrigtsen et al.   APPLIED PHYSICS LETTERS

Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current

(2018) E. B. Yakimov et al.   JOURNAL OF APPLIED PHYSICS

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

(2018) Esmat Farzana et al.   JOURNAL OF APPLIED PHYSICS

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

(2018) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Defect phase diagram for doping of Ga2O3

(2018) Stephan Lany   APL Materials

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

(2017) Linpeng Dong et al.   Scientific Reports

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

(2016) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

(2016) In-Hwan Lee et al.   JOURNAL OF APPLIED PHYSICS

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

(2016) Andrew M. Armstrong et al.   JOURNAL OF APPLIED PHYSICS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE

(2015) D. Gogova et al.   CRYSTENGCOMM

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

(2013) D. Gogova et al.   JOURNAL OF CRYSTAL GROWTH

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS