Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

Published 2014 View Full Article

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Title
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
Authors
Keywords
GaN, Flip chip ultraviolet light-emitting diodes (FC UV-LEDs), Nucleation, Reactive plasma deposited AlN
Journal
Nanoscale Research Letters
Volume 9, Issue 1, Pages 505
Publisher
Springer Nature
Online
2014-09-16
DOI
10.1186/1556-276x-9-505
References
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