High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire

(2010) Ji-Hao Cheng et al.   APPLIED PHYSICS LETTERS

Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

(2010) Y. H. Kim et al.   JOURNAL OF APPLIED PHYSICS

Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition

(2010) Hung-Cheng Lin et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy

(2009) Tsung-Yi Tang et al.   JOURNAL OF APPLIED PHYSICS

Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

(2008) Hung-Cheng Lin et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Light Extraction Enhancement of Gallium Nitride Epilayers with Stripe Pattern Transferred from Patterned Sapphire Substrate

(2008) Ko-Tao Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography

(2008) H W Huang et al.   NANOTECHNOLOGY

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

(2008) Haiyong Gao et al.   SOLID-STATE ELECTRONICS