Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

Title
Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
Authors
Keywords
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Journal
Nanoscale Research Letters
Volume 7, Issue 1, Pages 99
Publisher
Springer Nature
Online
2013-06-20
DOI
10.1186/1556-276x-7-99

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