Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

标题
Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
作者
关键词
-
出版物
Nanoscale Research Letters
Volume 7, Issue 1, Pages 99
出版商
Springer Nature
发表日期
2013-06-20
DOI
10.1186/1556-276x-7-99

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