Temperature tolerance study of high performance electrochemically gated SnO2 nanowire field-effect transistors
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Temperature tolerance study of high performance electrochemically gated SnO2 nanowire field-effect transistors
Authors
Keywords
-
Journal
Journal of Materials Chemistry C
Volume 1, Issue 14, Pages 2534
Publisher
Royal Society of Chemistry (RSC)
Online
2013-02-26
DOI
10.1039/c3tc00061c
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- High-Speed, Low-Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field-Effect Transistors
- (2012) Babak Nasr et al. ADVANCED FUNCTIONAL MATERIALS
- Printed and Electrochemically Gated, High-Mobility, Inorganic Oxide Nanoparticle FETs and Their Suitability for High-Frequency Applications
- (2012) Subho Dasgupta et al. ADVANCED FUNCTIONAL MATERIALS
- Organic transistors with high thermal stability for medical applications
- (2012) Kazunori Kuribara et al. Nature Communications
- Ultrathin and lightweight organic solar cells with high flexibility
- (2012) Martin Kaltenbrunner et al. Nature Communications
- Increased efficiency of low band gap polymer solar cells at elevated temperature and its origins
- (2011) Bin Yang et al. APPLIED PHYSICS LETTERS
- Stretchable, elastic materials and devices for solar energy conversion
- (2011) Darren J. Lipomi et al. Energy & Environmental Science
- Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric
- (2011) Daniel Kälblein et al. NANO LETTERS
- All-Organic Vapor Sensor Using Inkjet-Printed Reduced Graphene Oxide
- (2010) Vineet Dua et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- High-performance n-type organic field-effect transistors with ionic liquid gates
- (2010) S. Ono et al. APPLIED PHYSICS LETTERS
- Thermal stability of organic thin-film transistors with self-assembled monolayer dielectrics
- (2010) Kenjiro Fukuda et al. APPLIED PHYSICS LETTERS
- Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors
- (2010) Ken Hoshino et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain
- (2010) Sung-Jin Choi et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Single-Crystalline Arsenic-Doped Indium Oxide Nanowires for Transparent Thin-Film Transistors and Active Matrix Organic Light-Emitting Diode Displays
- (2009) Po-Chiang Chen et al. ACS Nano
- Electronic functionalization of solid-to-liquid interfaces between organic semiconductors and ionic liquids: Realization of very high performance organic single-crystal transistors
- (2009) T. Uemura et al. APPLIED PHYSICS LETTERS
- High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors
- (2009) W. F. Zhang et al. APPLIED PHYSICS LETTERS
- Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors
- (2009) Kazushige Takechi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- InAs nanowire metal-oxide-semiconductor capacitors
- (2008) Stefano Roddaro et al. APPLIED PHYSICS LETTERS
- p-type field-effect transistor of NiO with electric double-layer gating
- (2008) Hidekazu Shimotani et al. APPLIED PHYSICS LETTERS
- Temperature Dependence of Protocrystalline Silicon/Microcrystalline Silicon Double-Junction Solar Cells
- (2008) Kobsak Sriprapha et al. JAPANESE JOURNAL OF APPLIED PHYSICS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started