Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 3, Issue 3, Pages Q13-Q16

出版商

The Electrochemical Society

发表日期

2014-01-24

DOI

10.1149/2.010403ssl

Discuss science. Find collaborators. Network.

Join a conversation

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now