Effect of Polishing Parameters on Chemical Mechanical Planarization of C-Plane (0001) Gallium Nitride Surface Using SiO2and Al2O3Abrasives

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

(2012) Hideo Aida et al.   CURRENT APPLIED PHYSICS

Nanoscale anisotropic plastic deformation in single crystal GaN

(2012) Jun Huang et al.   Nanoscale Research Letters

Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica

(2011) Hideo Aida et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces

(2009) H.S. Lee et al.   CIRP ANNALS-MANUFACTURING TECHNOLOGY

Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution

(2007) J. Murata et al.   JOURNAL OF CRYSTAL GROWTH

Chemical Mechanical Polishing of GaN

(2007) S. Hayashi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY