Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Atomic Layer Deposition of TiO[sub 2] Films on Ru Buffered TiN Electrode for Capacitor Applications

(2009) Gyu-Jin Choi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Continuum-Level Analytical Model for Solid Oxide Fuel Cells with Mixed Conducting Electrolytes

(2009) Keith L. Duncan et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Epitaxial growth of high-κ TiO[sub 2] rutile films on RuO[sub 2] electrodes

(2009) K. Fröhlich et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

The deposition of nanocrystalline TiO2 thin film on silicon using Sol–Gel technique and its characterization

(2009) Mukesh Kumar et al.   MICROELECTRONIC ENGINEERING

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

(2008) G. Brammertz et al.   APPLIED PHYSICS LETTERS

The influence of series resistance and interface states on intersecting behavior ofI–Vcharacteristics of Al/TiO2/p-Si (MIS) structures at low temperatures

(2008) O Pakma et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY