Novel Ferroelectric Polymer Memory Coupling Two Identical Thin-Film Transistors
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Novel Ferroelectric Polymer Memory Coupling Two Identical Thin-Film Transistors
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume 2, Issue 1, Pages 1500206
Publisher
Wiley
Online
2015-11-18
DOI
10.1002/aelm.201500206
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices
- (2015) Ji Hoon Park et al. Journal of Materials Chemistry C
- Prospective of Semiconductor Memory Devices: from Memory System to Materials
- (2015) Cheol Seong Hwang Advanced Electronic Materials
- Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors
- (2014) Mi Jang et al. ADVANCED MATERIALS
- Non-Volatile Ferroelectric Memory with Position-Addressable Polymer Semiconducting Nanowire
- (2014) Sun Kak Hwang et al. Small
- Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
- (2014) J. A. Caraveo-Frescas et al. Scientific Reports
- Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films
- (2014) Wei Jin Hu et al. Scientific Reports
- Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation
- (2014) Huabin Sun et al. Scientific Reports
- Molecular modeling of the piezoelectric effect in the ferroelectric polymer poly(vinylidene fluoride) (PVDF)
- (2013) Vladimir S. Bystrov et al. JOURNAL OF MOLECULAR MODELING
- High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes
- (2012) M.A. Khan et al. ADVANCED MATERIALS
- Efficiency enhancement in organic solar cells with ferroelectric polymers
- (2011) Yongbo Yuan et al. NATURE MATERIALS
- Organic inkjet-patterned memory array based on ferroelectric field-effect transistors
- (2011) Tse Nga Ng et al. ORGANIC ELECTRONICS
- Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non-Volatile Polymer Memory
- (2009) Seok Ju Kang et al. ADVANCED FUNCTIONAL MATERIALS
- High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels
- (2009) Kwang H. Lee et al. ADVANCED MATERIALS
- Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
- (2009) Sung-Min Yoon et al. IEEE ELECTRON DEVICE LETTERS
- Printed Nonvolatile Memory for a Sheet-Type Communication System
- (2009) Tsuyoshi Sekitani et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Giant tunnel electroresistance for non-destructive readout of ferroelectric states
- (2009) V. Garcia et al. NATURE
- Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics
- (2008) D. K. Hwang et al. APPLIED PHYSICS LETTERS
- Pentacene-Based Low-Leakage Memory Transistor with Dielectric/Electrolytic/Dielectric Polymer Layers
- (2008) Wonjun Choi et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started